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Wisdom Semiconductor
WFP50N06
N-Channel MOSFET
Features

RDS(on) (Max 0.022 )@VGS=10V Gate Charge (Typical 32nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (175C)
Symbol
2. Drain
1. Gate

3. Source
General Description
This Power MOSFET is produced using Wisdom's advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
TO-220
12
3
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current(@TC = 25C) Continuous Drain Current(@TC = 100C) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 C) Derating Factor above 25 C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds.
(Note 2) (Note 1) (Note 3) (Note 1)
Parameter
Value
60 50 35 200
Units
V A A A V mJ mJ V/ns W W/C C C
20
493 12.0 7.0 120 0.8 - 55 ~ 175 300
Thermal Characteristics
Symbol
RJC RCS RJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Case to Sink Thermal Resistance, Junction-to-Ambient
Value Min.
-
Typ.
0.5 -
Max.
1.24 62.5
Units
C/W C/W C/W
Copyright@Wisdom Semiconductor Inc., All rights reserved.
WFP50N06
Electrical Characteristics
Symbol Off Characteristics
BVDSS BVDSS/ TJ IDSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature coefficient Drain-Source Leakage Current Gate-Source Leakage, Forward Gate-source Leakage, Reverse VGS = 0V, ID = 250uA ID = 250uA, referenced to 25 C VDS = 60V, VGS = 0V VDS = 48V, TC = 125 C VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VDS = VGS, ID = 250uA VGS =10 V, ID = 25.0A 60 0.07 10 100 100 -100 V V/C uA uA nA nA ( TC = 25 C unless otherwise noted )
Parameter
Test Conditions
Min
Typ
Max
Units
IGSS
On Characteristics
VGS(th) RDS(ON) Gate Threshold Voltage Static Drain-Source On-state Resistance 2.0 0.018 4.0 0.022 V
Dynamic Characteristics
Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS =0 V, VDS =25V, f = 1MHz 1050 460 70 1365 600 90 pF
Dynamic Characteristics
Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge(Miller Charge) VDS =48V, VGS =10V, ID =50A
(Note 4, 5)
VDD =30V, ID =25.0A, RG =25
(Note 4, 5)
20 100 80 85 32 8 12
50 210 170 180 42 nC ns
-
Source-Drain Diode Ratings and Characteristics
Symbol
IS ISM VSD trr Qrr NOTES
1. Repeativity rating : pulse width limited by junction temperature 2. L = 230uH, IAS =50A, VDD = 25V, RG = 25 , Starting TJ = 25C 3. ISD 50A, di/dt 300A/us, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse Width 300us, Duty Cycle 2% 5. Essentially independent of operating temperature.
Parameter
Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Test Conditions
Integral Reverse p-n Junction Diode in the MOSFET IS =50A, VGS =0V IS=50A, VGS=0V, dIF/dt=100A/us
Min.
-
Typ.
50 70
Max.
50 200 1.5 -
Unit.
A V ns uC
Copyright@Wisdom Semiconductor Inc., All rights reserved.
Typical Characteristics
10
2
10
1
ID, Drain Current [A]
ID, Drain Current [A]
VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top :
10
2
10
1
175 25 -55
10
0
10
0
Note : 1. 250s Pulse Test 2. TC = 25
Notes : 1. VDS = 30V 2. 250 s Pulse Test
10
-1
10
0
10
1
2
4
6
8
10
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
0.05
Drain-Source On-Resistance
10
2
VGS = 10V
0.03
VGS = 20V
IDR, Reverse Drain Current [A]
0.04
R DS(O N) [ ],
0.02
10
1
0.01
Note : TJ = 25
175
0
25
Notes : 1. VGS = 0V 2. 250s Pulse Test
0.00 0 50 100 150 200
10
ID, Drain Current [A]
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
12
3500 3000 2500
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
VGS, Gate-Source Voltage [V]
10
VDS = 30V VDS = 48V
Capacitance [pF]
Coss
2000
8
Ciss
1500 1000 500 0 -1 10
Notes : 1. VGS = 0 V 2. f = 1 MHz
6
4
Crss
2
Note : ID = 50A
10
0
10
1
0
0
5
10
15
20
25
30
35
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
Typical Characteristics
(Continued)
1.2
2.5
BVDSS, (Normalized) Drain-Source Breakdown Voltage
RDS(ON), (Normalized) Drain-Source On-Resistance
2.0
1.1
1.5
1.0
1.0
0.9
Notes : 1. VGS = 0 V 2. ID = 250 A
0.5
Notes : 1. VGS = 10 V 2. ID = 25.0 A
0.8 -100
-50
0
50
100
o
150
200
0.0 -100
-50
0
50
100
o
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation vs. Temperature
Figure 8. On-Resistance Variation vs. Temperature
10
3
60
Operation in This Area is Limited by R DS(on)
50
ID, Drain Current [A]
10
2
100 s 1 ms 10 ms DC
ID, Drain Current [A]
40
30
10
1
20
Notes :
1. TC = 25 C 2. TJ = 175 C 3. Single Pulse
o o
10
10 -1 10
0
10
0
10
1
10
2
0 25
50
75
100
125
150
175
VDS, Drain-Source Voltage [V]
TC, Case Temperature []
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs. Case Temperature
10
0
Z JC Thermal Response (t),
D = 0 .5 0 .2 0 .1
10
-1
N o te s : 1 . Z J C t) = 1 .2 4 /W M a x . ( 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z J C t) (
0 .0 5 0 .0 2 0 .0 1 s in g le p u ls e
PDM t1 t2
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ]
Figure 11. Transient Thermal Response Curve
Gate Charge Test Circuit & Waveform
5K 0 1V 2 20F 0n 30F 0n
SmTp a e ye a DT sU V D S
VS G Q g 1V 0 Q g s Q g d
VS G
DT U
3A m
C re hg a
Resistive Switching Test Circuit & Waveforms
V D S R G V G S
R L V D D
V D S
9 0 %
1 0 V
D U T
V G S
1 0 %
to d) (n
t r tn o
to df (f ) tf o f
t f
Unclamped Inductive Switching Test Circuit & Waveforms
L V D S I D R G 1 0 V
tp
BS VS D 1 2 -----------E= - LS - - - - - - A -- I SA 2 B S- D VS V D D BS VS D IS A V D D I( t D) V D D
t p
D U T
V( Dt S) Te i m
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+ V
DS
_ I
SD
L D r iv e r R
G
S am e T ype as DUT
V
DD
V
GS
* d v / d t c o n t r o lle d b y R G * I S D c o n t r o l l e d b y p u l s e p e r io d
V GS ( D r iv e r )
G a t e P u ls e W id t h D = -------------------------G a t e P u ls e P e r io d
10V
I F M , B o d y D io d e F o r w a r d C u r r e n t
I SD (DUT ) IR M
d i/ d t
B o d y D io d e R e v e r s e C u r r e n t
V DS (DUT )
B o d y D io d e R e c o v e r y d v / d t
V
SD
V
DD
B o d y D io d e F o r w a r d V o lt a g e D r o p
Package Dimensions
TO-220
9.90 0.20 1.30 0.10 2.80 0.10 (8.70) o3.60 0.10 (1.70) 4.50 0.20
1.30 -0.05
+0.10
9.20 0.20
(1.46)
13.08 0.20
(1.00)
(3.00)
15.90 0.20
1.27 0.10
1.52 0.10
0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20]
10.08 0.30
18.95MAX.
(3.70)
(45 )
0.50 -0.05
+0.10
2.40 0.20
10.00 0.20

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